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Customer Case Study: Using SmartSpice to Deliver Next-Generation, Low Power Memory Systems

At our SURGE Santa Clara event in October, Cameron Fisher, CEO of Mobile Semiconductor described their experience in adopting SmartSpice as their characterization engine for creating the database for their Trailblaze™ memory compiler software. Below is a summary of his talk.

Silvaco Exhibits and Presents Invited Paper on Atomistic Simulation at IEDM 2019

The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. It is the flagship conference for Nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices Novel quantum and nano-scale devices and phenomenology Optoelectronics, devices for power and energy harvesting, high-speed devices Process technology and device modeling and simulation

How TCAD Can Optimize Power Electronics

The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices.

SmartSpice Does It Smart

By this definition, any SPICE simulator qualifies as a smart design tool, but what about versatility? SmartSpice has had over 30 years of product development and is the Swiss Army knife of circuit simulators, with wide applicability to different CAD design flows.

The Need for Advanced Wide Bandgap Power Electronics

PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining to silicon carbide (SiC) and gallium nitride (GaN) PE. I learned a great deal about SiC & GaN PE in this roadmap and I have copied the relevant sections below.

3D TCAD Simulation for Power Devices

y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today we see SOCs running under a 1V supply voltage, but there is a totally different market for power devices that are at the other end of the voltage spectrum and they handle switching ranges from 12V – 250V. To learn more about power devices and how the process and device modeling is done, I read a Silvaco publication entitled Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET.

Where Circuit Simulation Model Files Come From

I started out my engineering career by doing transistor-level circuit design and we used a proprietary SPICE circuit simulator. One thing that I quickly realized was that the accuracy of my circuit simulations depended entirely on the model files and parasitics. Here we are 40 years later and the accuracy of SPICE circuit simulations still depend on the model files and parasitics, but with the added task of using 3D field solvers to get accurate parasitic values, and even the use of 3D TCAD tools to model the complex physics of nm IC designs using FinFET transistors.

230 Papers on Power Device Simulations using Silvaco TCAD

A quick search of the IEEE Xplore online library gives a list of more than 230 published technical articles on Power Device Simulation using Silvaco TCAD. Here are some recent papers with the authors’ abstracts that cover silicon-carbide (SiC) and Junction-Less Double Gate MOSFET devices. Any mention of ‘we’ or ‘our’ refers to the paper’s authors:

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