Graham Bell, Author at Silvaco

About Graham Bell

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Meanwhile lets just say that we are proud Graham Bell contributed a whooping 541 entries.

Entries by Graham Bell

Fast, Physical, Predictive and Calibrated Modeling of Ion Implantation

August 1, 2000in Simulation Standard /by Graham Bell

In a Research & Development environment, Technology Computer Aided Design (TCAD) is involved in the device optimization loop and requires efficient and predictive implantation modeling with frequent updating of the range of validity. For this purpose, semi-empirical models using statistical distributions are mainly chosen, because this kind of simulation is faster than the physically based Monte-Carlo (MC) approach. We propose a methodology which can be applied to ion implantation modeling with easy build-up, and which gives a predictive capability in the explored experimental domain.

Can Atlas be used to simulate advanced III-V or II-VI materials?

August 1, 2000in Simulation Standard /by Graham Bell

Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can be found in Appendix B of the ATLAS Users Manual Vol. II.

Modeling and Parameter Extraction Technique for HV MOS Devices with BSIM3v3

July 1, 2000in Simulation Standard /by Graham Bell

In this paper, I have used the same technique to model uni-directional HV MOS devices as previously reported for bi-directional HV MOS devices [4] -[5] while adopting a new parameter extraction technique. With the new uni-directional HV MOS modeling technique, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured characteristics well, which confirms its effectiveness.

New RF MOSFET Small Signal SPICE Model – Part 2

July 1, 2000in Simulation Standard /by Graham Bell

RF MOSFET Small – Signal Model and Parameters
Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1.
Parameter extraction is performed from real and imaginary parts of the Y-parameters. Each parameter is extracted from the Y-parameter equations which contain frequency terms.

UFSOI: Process-Based Compact SOI MOSFET Models

July 1, 2000in Simulation Standard /by Graham Bell

SOI technology appears now to have become an advantageous, viable option for low-voltage and high-performance CMOS integrated circuits in digital, analog, and mixed-signal applications. The thin-film nature of the SOI MOSFET, however, can underlie physical mechanisms that complicate circuit simulation and portend equivocation in design. Consequently, Silvaco has incorporated the physical process-based UFSOI MOSFET models into SmartSpice and Utmost.