Self-heating effect may cause over-heated damage and degradation for silicon-on-insulator (SOI) devices, so numerical counting heat generated, and distribution can optimize the radio frequency integrated circuits (RFICs) applications. Both conventional and high resistivity, trap-rich SOI substrates are fabricated to investigate self-heating effects. There are two identical n channel metal-oxide-semiconductor-field-effect transistors (nMOSFETs) placed together to share a common source and the same active silicon region. One MOSFET is biased above threshold voltage and into saturation to heat-up the active region as a heater, and another device is biased into the sub-threshold regime to track the temperature changes as a localized thermometer. Compared to bulk single crystal silicon, the trap-rich SOI substrate consists of a high-defected polysilicon layer, which has introduced between the buried oxide layer and substrate. Due to the grain boundaries, the polysilicon layer has more phonon scattering and less value of thermal conductivity. However, based on the measurement results, two types of substrates SOI devices have similar performance for temperature increased. Therefore, a Silvaco numerical simulation has been issued to analysis the heat flow distribution within the devices and dissipation solution.