It is common to run the process simulation for the part of a larger structure just to reduce the computation time. To account for the influence of parts of the structure outside the simulation domain, Victory Process makes assumptions about overall structure geometry.
March 23, 2023
In this webinar, we will present the benefits of adopting SmartSpice’s unique 4-terminal TFT compact model, and we describe how SmartSpice Flex Modeling technology can be used to simulate image retention issues.
The utilization of thin material layers is common in modern semiconductor device fabrication. Subsequent etching steps require an accurate modeling of these thin layers. Although level-set based process TCAD simulations are capable of representing flat thin material layers with sub-grid accuracy, topographical changes during etching processes expose the low underlying grid resolution, which leads to detrimental artifacts.
February 23, 2023
In this webinar, Sungwon Kong will discuss these technologies and how TCAD can be broadly applied to multiple detector topology and material sets, thereby enabling multiple end-user markets.
February 16, 2023
In this webinar, we will share the challenges of optimizing and validating different libraries, and demonstrate how Cello, Viola, and SmartSpice contribute in a unique and dynamic way to realize fast and accurate optimization and characterization.
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.
January 26, 2023
In this webinar, we will introduce the Corner and Retargeting Module, the most recent addition to our modeling software platform, and review some of the newest models and technologies where Silvaco’s Utmost IV is a key contributor.
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.