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aniiex16.in : Use of C-Interpreter for Control of Damage Models.
Requires: SSUPREM4 Minimum Versions: ATHENA 5.20.0.R
This example shows how C-Interpreter can be used for control of PLUS.ONE (or UNIT.DAMAGE) and <311> Cluster formation models. Both models estimate distributions of point defect and <311> clusters by scaling implant profile using factors DAM.F and CLUSTER.F, correspondingly. Also, in the case of <311>, the user specifies the concentration limits within which the clusters can be formed.
These methods of damage model control are very limited and sometimes could not represent physical reality. For example, it is observed that clusters are not formed near silicon surface, but it cannot be specified within model limitations.
The first part of this example, and corresponding Figure on the left, shows that two <311> cluster bands are formed. This situation is even more pronounced in 2D since the <311> cluster band could propagate laterally and end up at the surface. This means that if the model is applied to S/D or LDD implant of a MOS device, the <311> would "appear" under the gate which is incorrect.
Use of C-interpreter allows us to modify the models. In this case the C-interpreter file aniiex16.liballows the cluster to be formed only at depths > 0.15 microns. Also, C-interpreter allows us to modify the PLUS.ONE model. In this example, C-interpreter specifies that the PLUS.ONE model is to be applied to concentrations only above level of 3e15 /cm^3.
The C-interpreter file is specified by the DAM.MODparameter in the IMPLANTstatement.
To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.