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anelex11.in : Two-Step Trench Etch Process

Requires: ELITE Minimum Versions: ATHENA 5.20.0.R

This example simulates trench etching. Etching is described by a combination of wet etching (30nm/min) and ion induced etching (100nm/min).

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.