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clex17.in : Back Annotated SRAM Analysis with Physical models
This example is similar to the previous example, in that a six-transistor, three metal, single poly SRAM cell is simulated and the parasitics calculated. See the description for the previous example.
This example also uses a user-defined, low permittivity material called Gateox to avoid calculating the area capacitance of the transistor twice, as would normally be done - once in CLEVER, and once again in the SPICE model.
Unlike the the previous example that had idealized Manhattan cross-sections, this example uses advanced lithographic and etch models. The ILLUMINATION statement simulates a specific light source, in this case a deep UV source. The MASK statement specifies an aerial image simulation with a critical intensity, aperture and defocus. The aluminum interconnects and vias are etched for given times and rates and the isotropy (anisotropy) is specified.
The resulting capacitance for various lines in this structure is typically 35% lower than in the previous example. This difference illustrates the significance of simulating lithographic and etch effects for capacitance calculations, as opposed to using ideal rectangular cross-sections.
This example is also discussed in the CLEVER tutorial in the manual.
To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.